PhD in Thermal Characterization of AlGaN/GaN High Electron Mobility Transistors

Ref: SS1206

Centre for Device Thermography and Reliability, School of Physics.

The project

Based in the Center for Device Thermography and Reliability (CDTR) at the University of Bristol, you will perform research on thermal characterization of AlGaN/GaN high electron mobility transistors (HEMTs) including integrated AlGaN/GaN-diamond device systems. You will contribute to the development of novel thermal characterization techniques that aim at gaining detailed understanding of heat transport in AlGaN/GaN HEMTs and diamond device systems with sub-micron spatial and nanosecond time resolution, including heat transport across interfaces. Gaining knowledge of heat transport and thermal management of these devices is critically important as their performance and reliability is strongly dependent on channel temperature. You will take advantage in your research of the technique of Raman thermography, a technique for temperature analysis of semiconductor electronics, developed and pioneered at the CDTR. Your research will also benefit from electrical, optical and microstructural techniques available in the CDTR for studying failure and degradation of AlGaN/GaN HEMTs.

The CDTR is one of the leading international centres in semiconductor device thermal management, device physics and device reliability research, and has been responsible for the development of unique device analysis techniques. Team members of the CDTR range across six nationalities, comprising both PhD students and postdoctoral researchers. The group is active in many EU, US, and UK research programmes, and is funded by the UK Engineering and Physical Sciences Research Council (EPSRC), the US Office of Naval Research, the European Space Agency and other funding agencies as well as by industry. More information on the CDTR and on the University of Bristol can be found at Bristol was voted the best city in England in terms of quality of life for employees in a survey of senior managers and board directors from 201 UK companies.

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Candidate requirements

You will have an undergraduate degree in physics, materials science, engineering or a related field (MSci, MSc or equivalent). Previous experience either in the characterization of semiconductor materials (thermal and/or electrical and/or optical techniques), in RF or in power electronics, and/or in electronic or opto-electronic devices, and/or in device simulation would be of benefit however not a requirement.


DTG/DTA (Physics)

Successful applicants will be offered a stipend of around £13,726 p.a. for 3.5 years

Due to residence requirements, this is limited to UK residents (UK or EC nationals previously residing three years in the UK), or EC nationals presently living outside the UK.

For further details please see:

How to apply

Please make an online application for this project via the ‘Apply’ button below. Please select the programme title on the Programme Choice page and enter details of the studentship when prompted in the Funding and Research Details sections of the form.

Please also email your C.V. to Prof. Martin Kuball (


For further information please contact:

Prof. Martin Kuball (

Deadline for applications

Position open until 1 December

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